19,777 research outputs found
On the momentum-dependence of -nuclear potentials
The momentum dependent -nucleus optical potentials are obtained based
on the relativistic mean-field theory. By considering the quarks coordinates of
meson, we introduced a momentum-dependent "form factor" to modify the
coupling vertexes. The parameters in the form factors are determined by fitting
the experimental -nucleus scattering data. It is found that the real
part of the optical potentials decrease with increasing momenta, however
the imaginary potentials increase at first with increasing momenta up to
MeV and then decrease. By comparing the calculated mean
free paths with those from / scattering data, we suggested that the
real potential depth is MeV, and the imaginary potential parameter
is MeV.Comment: 9 pages, 4 figure
The properties of kaonic nuclei in relativistic mean-field theory
The static properties of some possible light and moderate kaonic nuclei, from
C to Ti, are studied in the relativistic mean-field theory. The 1s and 1p state
binding energies of are in the range of MeV and
MeV, respectively. The binding energies of 1p states increase monotonically
with the nucleon number A. The upper limit of the widths are about
MeV for the 1s states, and about MeV for the 1p states. The lower
limit of the widths are about MeV for the 1s states, and
MeV for the 1p states. If MeV, the discrete bound states
should be identified in experiment. The shrinkage effect is found in the
possible kaonic nuclei. The interior nuclear density increases obviously, the
densest center density is about .Comment: 9 pages, 2 tables and 1 figure, widths are considered, changes a lo
First-principles study of native point defects in Bi2Se3
Using first-principles method within the framework of the density functional
theory, we study the influence of native point defect on the structural and
electronic properties of BiSe. Se vacancy in BiSe is a double
donor, and Bi vacancy is a triple acceptor. Se antisite (Se) is always
an active donor in the system because its donor level ((+1/0))
enters into the conduction band. Interestingly, Bi antisite(Bi) in
BiSe is an amphoteric dopant, acting as a donor when
0.119eV (the material is typical p-type) and as an acceptor when
0.251eV (the material is typical n-type). The formation energies
under different growth environments (such as Bi-rich or Se-rich) indicate that
under Se-rich condition, Se is the most stable native defect independent
of electron chemical potential . Under Bi-rich condition, Se vacancy
is the most stable native defect except for under the growth window as
0.262eV (the material is typical n-type) and
-0.459eV(Bi-rich), under such growth windows one
negative charged Bi is the most stable one.Comment: 7 pages, 4 figure
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